Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr
cesium lead bromide
gallium nitride
incommensurate epitaxy
lasing
perovskite
vapor-phase deposition
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
24 Sep 2019
24 Sep 2019
Historique:
pubmed:
23
8
2019
medline:
23
8
2019
entrez:
23
8
2019
Statut:
ppublish
Résumé
Integrating metallic halide perovskites with established modern semiconductor technology is significant for promoting the development of application-level optoelectronic devices. To realize such devices, exploring the growth dynamics and interfacial carrier dynamics of perovskites deposited on the core materials of semiconductor technology is essential. Herein, we report the incommensurate heteroepitaxy of highly oriented single-crystal cesium lead bromide (CsPbBr
Identifiants
pubmed: 31436948
doi: 10.1021/acsnano.9b02885
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM