On the Stability of Permanent Electrochemical Doping of Quantum Dot, Fullerene, and Conductive Polymer Films in Frozen Electrolytes for Use in Semiconductor Devices.
Journal
ACS applied nano materials
ISSN: 2574-0970
Titre abrégé: ACS Appl Nano Mater
Pays: United States
ID NLM: 101726750
Informations de publication
Date de publication:
23 Aug 2019
23 Aug 2019
Historique:
received:
08
05
2019
accepted:
16
07
2019
entrez:
3
9
2019
pubmed:
3
9
2019
medline:
3
9
2019
Statut:
ppublish
Résumé
Semiconductor films that allow facile ion transport can be electronically doped via electrochemistry, where the amount of injected charge can be controlled by the potential applied. To apply electrochemical doping to the design of semiconductor devices, the injected charge has to be stabilized to avoid unintentional relaxation back to the intrinsic state. Here, we investigate methods to increase the stability of electrochemically injected charges in thin films of a wide variety of semiconductor materials, namely inorganic semiconductors (ZnO NCs, CdSe NCs, and CdSe/CdS core/shell NCs) and organic semiconductors (P3DT, PCBM, and C
Identifiants
pubmed: 31475245
doi: 10.1021/acsanm.9b00863
pmc: PMC6711363
doi:
Types de publication
Journal Article
Langues
eng
Pagination
4900-4909Déclaration de conflit d'intérêts
The authors declare no competing financial interest.
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