Quenching of Exciton Recombination in Strained Two-Dimensional Monochalcogenides.
Journal
Physical review letters
ISSN: 1079-7114
Titre abrégé: Phys Rev Lett
Pays: United States
ID NLM: 0401141
Informations de publication
Date de publication:
16 Aug 2019
16 Aug 2019
Historique:
received:
17
04
2019
entrez:
7
9
2019
pubmed:
7
9
2019
medline:
7
9
2019
Statut:
ppublish
Résumé
We predict that long-lived excitons with very large binding energies can also exist in a single or few layers of monochalcogenides such as GaSe. Our theoretical study shows that excitons confined by a radial local strain field are unable to recombine despite electrons and holes coexisting in space. The localized single-particle states are calculated in the envelope function approximation based on a three-band k·p Hamiltonian obtained from density-functional-theory calculations. The binding energy and the decay rate of the exciton ground state are computed after including correlations in the basis of electron-hole pairs. The interplay between the localized strain and the caldera-type valence band characteristic of few-layered monochalcogenides creates localized electron and hole states with very different quantum numbers which hinders the recombination even for singlet excitons.
Identifiants
pubmed: 31491087
doi: 10.1103/PhysRevLett.123.077402
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM