Surpassing the 10% efficiency milestone for 1-cm

Journal

Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555

Informations de publication

Date de publication:
10 Sep 2019
Historique:
received: 09 04 2019
accepted: 05 08 2019
entrez: 12 9 2019
pubmed: 12 9 2019
medline: 12 9 2019
Statut: epublish

Résumé

Naphthalenediimide-based n-type polymeric semiconductors are extensively used for constructing high-performance all-polymer solar cells (all-PSCs). For such all-polymer systems, charge recombination can be reduced by using thinner active layers, yet suffering insufficient near-infrared light harvesting from the polymeric acceptor. Conversely, increasing the layer thickness overcomes the light harvesting issue, but at the cost of severe charge recombination effects. Here we demonstrate that to manage light propagation within all-PSCs, a thick bulk-heterojunction film of approximately 350 nm is needed to effectively enhance photo-harvesting in the near-infrared region. To overcome the severe charge recombination in such a thick film, a non-halogenic additive is used to induce a well-ordered micro-structure that inherently suppresses recombination loss. The combined strategies of light management and delicate morphology optimization lead to a promising efficiency over 10% for thick-film all-PSCs with active area of 1 cm

Identifiants

DOI: 10.1038/s41467-019-12132-6 PMID: 31506443 PMC: PMC6736853
pubmed: 31506443
doi: 10.1038/s41467-019-12132-6
pii: 10.1038/s41467-019-12132-6
pmc: PMC6736853
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

4100

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Auteurs

Baobing Fan (B)

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China.

Wenkai Zhong (W)

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China.

Lei Ying (L)

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China. msleiying@scut.edu.cn.

Difei Zhang (D)

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China.

Meijing Li (M)

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China.

Yanrui Lin (Y)

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China.

Ruoxi Xia (R)

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China.

Feng Liu (F)

Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China.

Hin-Lap Yip (HL)

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China.
ORCID: 0000-0002-5750-9751

Ning Li (N)

Institute of Materials for Electronics and Energy Technology (i-MEET), Friedrich-Alexander-Universität Erlangen-Nürnberg, Martensstr. 7, 91058, Erlangen, Germany. ning.li@fau.de.
Helmholtz Institute Erlangen-Nürnberg for Renewable Energy (HI ERN), Immerwahrstr. 2, 91058, Erlangen, Germany. ning.li@fau.de.
National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, 450002, Zhengzhou, China. ning.li@fau.de.
ORCID: 0000-0003-1208-4638

Yuguang Ma (Y)

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China.

Christoph J Brabec (CJ)

Institute of Materials for Electronics and Energy Technology (i-MEET), Friedrich-Alexander-Universität Erlangen-Nürnberg, Martensstr. 7, 91058, Erlangen, Germany.
Helmholtz Institute Erlangen-Nürnberg for Renewable Energy (HI ERN), Immerwahrstr. 2, 91058, Erlangen, Germany.

Fei Huang (F)

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China. msfhuang@scut.edu.cn.
ORCID: 0000-0001-9665-6642

Yong Cao (Y)

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China.

Classifications MeSH