Interfacial pH Behavior at a Cell/Gate Insulator Nanogap Induced by Allergic Responses.


Journal

ACS omega
ISSN: 2470-1343
Titre abrégé: ACS Omega
Pays: United States
ID NLM: 101691658

Informations de publication

Date de publication:
03 Sep 2019
Historique:
received: 23 06 2019
accepted: 12 08 2019
entrez: 12 9 2019
pubmed: 12 9 2019
medline: 12 9 2019
Statut: epublish

Résumé

In this paper, we clarify the interfacial pH behavior induced by allergic responses at a mast cell/gate insulator nanogap detected by laser scanning confocal fluorescence microscopy. In a previous work, the change in interfacial pH detected on the basis of allergic responses was monitored at a mast cell/gate insulator nanogap interface using a cell-cultured gate ion-sensitive field-effect transistor (ISFET), but the interfacial pH behavior at a mast cell/gate insulator nanogap has not been clarified using other methods. Here, the phospholipid fluorescein is employed as the extracellular pH indicator, which is fixed to the external side of the plasma membrane of mast cells cultured on a substrate. As a result, the interfacial pH at the mast cell/substrate nanogap increases after mast cells with IgE on their membrane are activated by the interaction between IgE and an allergen. This is due to the basicity of histamine molecules released from mast cells. Moreover, the change in the interfacial pH at the mast cell/substrate nanogap is larger than that at the mast cell/bulk solution interface. That is, molecules of substances secreted as a result of allergic responses are assumed to accumulate around the cell/substrate nanogap. The data obtained in this study support the idea that potentiometric ion sensors such as ISFETs can detect a cellular-function-induced change in pH at a cell/electrode nanogap in real time.

Identifiants

pubmed: 31508549
doi: 10.1021/acsomega.9b01872
pmc: PMC6733167
doi:

Types de publication

Journal Article

Langues

eng

Pagination

14255-14260

Déclaration de conflit d'intérêts

The authors declare no competing financial interest.

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Auteurs

Hiroto Satake (H)

Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.

Toshiya Sakata (T)

Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.

Classifications MeSH