Observation of Strong Polarization Enhancement in Ferroelectric Tunnel Junctions.
Ferroelectric tunnel junctions
oxygen vacancies
polarization enhancement
transmission electron microscopy
ultrathin films
Journal
Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070
Informations de publication
Date de publication:
09 10 2019
09 10 2019
Historique:
pubmed:
12
9
2019
medline:
12
9
2019
entrez:
12
9
2019
Statut:
ppublish
Résumé
Ferroelectric heterostructures, with capability of storing data at ultrahigh densities, could act as the platform for next-generation memories. The development of new device paradigms has been hampered by the long-standing notion of inevitable ferroelectricity suppression under reduced dimensions. Despite recent experimental observation of stable polarized states in ferroelectric ultrathin films, the out-of-plane polarization components in these films are strongly attenuated compared to thicker films, implying a degradation of device performance in electronic miniaturization processes. Here, in a model system of BiFeO
Identifiants
pubmed: 31508969
doi: 10.1021/acs.nanolett.9b01878
doi:
Types de publication
Journal Article
Research Support, U.S. Gov't, Non-P.H.S.
Research Support, Non-U.S. Gov't
Langues
eng
Sous-ensembles de citation
IM