Selective Wet Etching of Silicon Germanium in Composite Vertical Nanowires.
chemical etching
in situ TEM
nanofabrication
nanowire
silicon germanium
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
09 Oct 2019
09 Oct 2019
Historique:
pubmed:
17
9
2019
medline:
17
9
2019
entrez:
17
9
2019
Statut:
ppublish
Résumé
Silicon germanium (Si
Identifiants
pubmed: 31525293
doi: 10.1021/acsami.9b11934
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM