Gate Quantum Capacitance Effects in Nanoscale Transistors.

CNT-gated SOI MOSFET Gate quantum capacitance carbon nanotube gate gate charge limited MOSFET gate starvation limited density of states low-dimensional gate

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
09 10 2019
Historique:
pubmed: 19 9 2019
medline: 19 9 2019
entrez: 19 9 2019
Statut: ppublish

Résumé

As the physical dimensions of a transistor gate continue to shrink to a few atoms, performance can be increasingly determined by the limited electronic density of states (DOS) in the gate and the gate quantum capacitance (

Identifiants

DOI: 10.1021/acs.nanolett.9b02660 PMID: 31532995
pubmed: 31532995
doi: 10.1021/acs.nanolett.9b02660
doi:

Types de publication

Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S.

Langues

eng

Sous-ensembles de citation

IM

Pagination

7130-7137

Auteurs

Sujay B Desai (SB)

Electrical Engineering and Computer Sciences , University of California, Berkeley , Berkeley , California 94720 , United States.
Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States.
Berkeley Sensor and Actuator Center , University of California, Berkeley , Berkeley , California 94720 , United States.
ORCID: 0000-0001-6447-2769

Hossain M Fahad (HM)

Electrical Engineering and Computer Sciences , University of California, Berkeley , Berkeley , California 94720 , United States.
Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States.
Berkeley Sensor and Actuator Center , University of California, Berkeley , Berkeley , California 94720 , United States.
ORCID: 0000-0002-6758-5432

Theodor Lundberg (T)

Electrical Engineering and Computer Sciences , University of California, Berkeley , Berkeley , California 94720 , United States.

Gregory Pitner (G)

Electrical Engineering , Stanford University , Stanford , California 94305 , United States.
ORCID: 0000-0002-0518-3745

Hyungjin Kim (H)

Electrical Engineering and Computer Sciences , University of California, Berkeley , Berkeley , California 94720 , United States.
Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States.
Berkeley Sensor and Actuator Center , University of California, Berkeley , Berkeley , California 94720 , United States.

Daryl Chrzan (D)

Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States.
Materials Science and Engineering Department , University of California, Berkeley , Berkeley , California 94720 , United States.

H-S Philip Wong (HP)

Electrical Engineering , Stanford University , Stanford , California 94305 , United States.

Ali Javey (A)

Electrical Engineering and Computer Sciences , University of California, Berkeley , Berkeley , California 94720 , United States.
Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States.
Berkeley Sensor and Actuator Center , University of California, Berkeley , Berkeley , California 94720 , United States.
ORCID: 0000-0001-7214-7931

Classifications MeSH