Charge Separation in Epitaxial SnS/MoS
KPFM
MOCVD
MoS2
SnS
van der Waals heterojunction
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
30 Oct 2019
30 Oct 2019
Historique:
pubmed:
2
10
2019
medline:
2
10
2019
entrez:
2
10
2019
Statut:
ppublish
Résumé
The weak van der Waals bonding between monolayers in layered materials enables fabrication of heterostructures without the constraints of conventional heteroepitaxy. Although many novel heterostructures have been created by mechanical exfoliation and stacking, the direct growth of 2D chalcogenide heterostructures creates new opportunities for large-scale integration. This paper describes the epitaxial growth of layered,
Identifiants
pubmed: 31573788
doi: 10.1021/acsami.9b14412
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM