Effect of Crystallographic Orientation and Nanoscale Surface Morphology on Poly-Si/SiO
atomic force microscopy
electron-beam-induced current
passivated contact
silicon oxide
silicon solar cell
surface orientation
tunneling
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
13 Nov 2019
13 Nov 2019
Historique:
pubmed:
16
10
2019
medline:
16
10
2019
entrez:
16
10
2019
Statut:
ppublish
Résumé
High-efficiency crystalline silicon (Si) solar cells require textured surfaces for efficient light trapping. However, passivation of a textured surface to reduce carrier recombination is difficult. Here, we relate the electrical properties of cells fabricated on a KOH-etched, random pyramidal-textured Si surface to the nanostructure of the passivated contact and the textured surface morphology. The effects of both microscopic pyramidal morphology and nanoscale surface roughness on passivated contacts consisting of polycrystalline Si (
Identifiants
pubmed: 31610646
doi: 10.1021/acsami.9b11889
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM