Controlling Catalyst-Free Formation and Hole Gas Accumulation by Fabricating Si/Ge Core-Shell and Si/Ge/Si Core-Double Shell Nanowires.
catalyst-free
core−shell nanowire
germanium
hole gas accumulation
nanoimprint
silicon
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
26 Nov 2019
26 Nov 2019
Historique:
pubmed:
19
10
2019
medline:
19
10
2019
entrez:
19
10
2019
Statut:
ppublish
Résumé
The catalyst-free formation of silicon (Si) and germanium (Ge) core-shell and core-double shell nanowires (NWs) was studied for use as building blocks of high electron (hole) mobility transistors (HEMTs). Vertically aligned
Identifiants
pubmed: 31626528
doi: 10.1021/acsnano.9b06821
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM