Direct Observation of Band Gap Renormalization in Layered Indium Selenide.

ARPES band gap renormalization electron doping indium selenide

Journal

ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589

Informations de publication

Date de publication:
26 Nov 2019
Historique:
pubmed: 24 10 2019
medline: 24 10 2019
entrez: 24 10 2019
Statut: ppublish

Résumé

Manipulation of intrinsic electronic structures by electron or hole doping in a controlled manner in van der Waals layered materials is the key to control their electrical and optical properties. Two-dimensional indium selenide (InSe) semiconductor has attracted attention due to its direct band gap and ultrahigh mobility as a promising material for optoelectronic devices. In this work, we manipulate the electronic structure of InSe by

Identifiants

DOI: 10.1021/acsnano.9b07144 PMID: 31644265
pubmed: 31644265
doi: 10.1021/acsnano.9b07144
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

13486-13491

Auteurs

Zailan Zhang (Z)

International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics , Shenzhen University , Shenzhen 518060 , China.
Société Civile Synchrotron SOLEIL , L'Orme des Merisiers, Saint-Aubin, BP 48, Gif-sur-Yvette 91192 , France.

Zhesheng Chen (Z)

Laboratoire des Solides Irradiés , Ecole Polytechnique , CNRS, CEA/DRF/IRAMIS, Institut Polytechnique de Paris, Palaiseau 91128 , France.
ORCID: 0000-0001-7978-5637

Meryem Bouaziz (M)

Société Civile Synchrotron SOLEIL , L'Orme des Merisiers, Saint-Aubin, BP 48, Gif-sur-Yvette 91192 , France.

Christine Giorgetti (C)

Laboratoire des Solides Irradiés , Ecole Polytechnique , CNRS, CEA/DRF/IRAMIS, Institut Polytechnique de Paris, Palaiseau 91128 , France.
European Theoretical Spectroscopy Facility , Palaiseau 91128 , France.

Hemian Yi (H)

Société Civile Synchrotron SOLEIL , L'Orme des Merisiers, Saint-Aubin, BP 48, Gif-sur-Yvette 91192 , France.

Jose Avila (J)

Société Civile Synchrotron SOLEIL , L'Orme des Merisiers, Saint-Aubin, BP 48, Gif-sur-Yvette 91192 , France.

Bingbing Tian (B)

International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics , Shenzhen University , Shenzhen 518060 , China.
ORCID: 0000-0003-1508-6217

Abhay Shukla (A)

Institut de Minéralogie , de Physique des Matériaux et de Cosmochimie , CNRS-UMR7590, Sorbonne Université, 4 Place Jussieu , Paris 75252 , France.

Luca Perfetti (L)

Laboratoire des Solides Irradiés , Ecole Polytechnique , CNRS, CEA/DRF/IRAMIS, Institut Polytechnique de Paris, Palaiseau 91128 , France.
ORCID: 0000-0002-8426-557X

Dianyuan Fan (D)

International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics , Shenzhen University , Shenzhen 518060 , China.

Ying Li (Y)

International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics , Shenzhen University , Shenzhen 518060 , China.
Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province , Shenzhen University , Shenzhen 518060 , China.

Azzedine Bendounan (A)

Société Civile Synchrotron SOLEIL , L'Orme des Merisiers, Saint-Aubin, BP 48, Gif-sur-Yvette 91192 , France.
ORCID: 0000-0001-7557-4322

Classifications MeSH