Impact of Oxygen Vacancy Occupancy on Charge Carrier Dynamics in BiVO
Journal
Journal of the American Chemical Society
ISSN: 1520-5126
Titre abrégé: J Am Chem Soc
Pays: United States
ID NLM: 7503056
Informations de publication
Date de publication:
27 Nov 2019
27 Nov 2019
Historique:
pubmed:
31
10
2019
medline:
31
10
2019
entrez:
31
10
2019
Statut:
ppublish
Résumé
Oxygen vacancies are ubiquitous in metal oxides and critical to performance, yet the impact of these states upon charge carrier dynamics important for photoelectrochemical and photocatalytic applications remains contentious and poorly understood. A key challenge is the unambiguous identification of spectroscopic fingerprints which can be used to track their function. Herein, we employ five complementary techniques to modulate the electronic occupancy of states associated with oxygen vacancies in situ in BiVO
Identifiants
pubmed: 31663329
doi: 10.1021/jacs.9b09056
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM