Mechanism of Néel Order Switching in Antiferromagnetic Thin Films Revealed by Magnetotransport and Direct Imaging.


Journal

Physical review letters
ISSN: 1079-7114
Titre abrégé: Phys Rev Lett
Pays: United States
ID NLM: 0401141

Informations de publication

Date de publication:
25 Oct 2019
Historique:
revised: 07 08 2019
received: 26 10 2018
entrez: 9 11 2019
pubmed: 9 11 2019
medline: 9 11 2019
Statut: ppublish

Résumé

We probe the current-induced magnetic switching of insulating antiferromagnet-heavy-metal systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one-third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely, the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.

Identifiants

pubmed: 31702247
doi: 10.1103/PhysRevLett.123.177201
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

177201

Auteurs

L Baldrati (L)

Institute of Physics, Johannes Gutenberg-University Mainz, 55128 Mainz, Germany.

O Gomonay (O)

Institute of Physics, Johannes Gutenberg-University Mainz, 55128 Mainz, Germany.

A Ross (A)

Institute of Physics, Johannes Gutenberg-University Mainz, 55128 Mainz, Germany.
Graduate School of Excellence Materials Science in Mainz, 55128 Mainz, Germany.

M Filianina (M)

Institute of Physics, Johannes Gutenberg-University Mainz, 55128 Mainz, Germany.
Graduate School of Excellence Materials Science in Mainz, 55128 Mainz, Germany.

R Lebrun (R)

Institute of Physics, Johannes Gutenberg-University Mainz, 55128 Mainz, Germany.

R Ramos (R)

WPI-Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.

C Leveille (C)

Institute of Physics, Johannes Gutenberg-University Mainz, 55128 Mainz, Germany.

F Fuhrmann (F)

Institute of Physics, Johannes Gutenberg-University Mainz, 55128 Mainz, Germany.

T R Forrest (TR)

Diamond Light Source, Chilton, Didcot, Oxfordshire OX11 0DE, United Kingdom.

F Maccherozzi (F)

Diamond Light Source, Chilton, Didcot, Oxfordshire OX11 0DE, United Kingdom.

S Valencia (S)

Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein-Strasse 15, D-12489 Berlin, Germany.

F Kronast (F)

Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein-Strasse 15, D-12489 Berlin, Germany.

E Saitoh (E)

WPI-Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japan.
Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan.
Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan.

J Sinova (J)

Institute of Physics, Johannes Gutenberg-University Mainz, 55128 Mainz, Germany.

M Kläui (M)

Institute of Physics, Johannes Gutenberg-University Mainz, 55128 Mainz, Germany.
Graduate School of Excellence Materials Science in Mainz, 55128 Mainz, Germany.

Classifications MeSH