Preparation of Low-Resistance and Residue-free ITO Films for Large-scale 3D Displays.
3D display
amorphous ITO thin-film electrode
deep-sea exploration
residue-free
water vapor
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
11 Dec 2019
11 Dec 2019
Historique:
pubmed:
16
11
2019
medline:
16
11
2019
entrez:
16
11
2019
Statut:
ppublish
Résumé
The large-sized naked-eye three-dimensional (3D) display is a critical device in the real-time topographic survey for deep-sea scientific research. As a core component, the low-impedance transparent conductive indium tin oxide (ITO) thin-film electrode lacks a reliable industrial preparation method. In the 3D display, the grating element with a low-resistance ITO film electrode should have a good binocular parallax to drive the display favorably. However, an increase in the ITO film temperature during deposition may induce its crystallization, and its etching residue may cause a short circuit between the ITO electrodes and abnormal display operation. In this work, we propose a simple and straightforward technique to produce amorphous thin ITO films by controlling the water vapor flow rate during the deposition process. The obtained ITO amorphous thick film (300 nm) can be etched without leaving residues on the display surface, ensuring vivid display performance of the 3D display. A field test employing the 3D display, consisting of a 3D parallax barrier and a two-dimensional (2D) display, does not exhibit a short-circuit phenomenon caused by residues encountered in previous devices. This work makes the 3D display applicable for the real-time topographic survey on the basis of both satisfying the nonetching residue and the decrease of the resistance value.
Identifiants
pubmed: 31729862
doi: 10.1021/acsami.9b16782
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM