Preparation of Low-Resistance and Residue-free ITO Films for Large-scale 3D Displays.

3D display amorphous ITO thin-film electrode deep-sea exploration residue-free water vapor

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
11 Dec 2019
Historique:
pubmed: 16 11 2019
medline: 16 11 2019
entrez: 16 11 2019
Statut: ppublish

Résumé

The large-sized naked-eye three-dimensional (3D) display is a critical device in the real-time topographic survey for deep-sea scientific research. As a core component, the low-impedance transparent conductive indium tin oxide (ITO) thin-film electrode lacks a reliable industrial preparation method. In the 3D display, the grating element with a low-resistance ITO film electrode should have a good binocular parallax to drive the display favorably. However, an increase in the ITO film temperature during deposition may induce its crystallization, and its etching residue may cause a short circuit between the ITO electrodes and abnormal display operation. In this work, we propose a simple and straightforward technique to produce amorphous thin ITO films by controlling the water vapor flow rate during the deposition process. The obtained ITO amorphous thick film (300 nm) can be etched without leaving residues on the display surface, ensuring vivid display performance of the 3D display. A field test employing the 3D display, consisting of a 3D parallax barrier and a two-dimensional (2D) display, does not exhibit a short-circuit phenomenon caused by residues encountered in previous devices. This work makes the 3D display applicable for the real-time topographic survey on the basis of both satisfying the nonetching residue and the decrease of the resistance value.

Identifiants

pubmed: 31729862
doi: 10.1021/acsami.9b16782
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

45903-45913

Auteurs

Zhiqiang Zhang (Z)

Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes National Laboratory of Mineral, Materials School of Materials Science and Technology , China University of Geosciences , Beijing 100083 , China.
Product Development Center , Beijing BOE Optoelectronics Technology Co., Ltd , Beijing 100176 , China.

Xiang Yu (X)

Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes National Laboratory of Mineral, Materials School of Materials Science and Technology , China University of Geosciences , Beijing 100083 , China.

Wenjing Zhao (W)

Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes National Laboratory of Mineral, Materials School of Materials Science and Technology , China University of Geosciences , Beijing 100083 , China.

Kai Lu (K)

Product Development Center , Beijing BOE Optoelectronics Technology Co., Ltd , Beijing 100176 , China.

Xinyou Ji (X)

Product Development Center , Beijing BOE Optoelectronics Technology Co., Ltd , Beijing 100176 , China.

Rabah Boukherroub (R)

Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes , UMR 8520, IEMN , F-59000 Lille , France.

Classifications MeSH