Self-Induced Growth of GaN Nanowall Structure on Si (111) by Laser Molecular Beam Epitaxy.
Journal
Journal of nanoscience and nanotechnology
ISSN: 1533-4899
Titre abrégé: J Nanosci Nanotechnol
Pays: United States
ID NLM: 101088195
Informations de publication
Date de publication:
01 Jun 2020
01 Jun 2020
Historique:
entrez:
22
11
2019
pubmed:
22
11
2019
medline:
22
11
2019
Statut:
ppublish
Résumé
Evolution of GaN nanostructure grown on Si (111) substrate has been studied systematically using laser molecular beam epitaxial process. The
Identifiants
pubmed: 31748096
doi: 10.1166/jnn.2020.17503
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM