Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer.
APSYS
AlGaN
DUV LED
MOCVD
SEDL
Journal
Nanoscale research letters
ISSN: 1931-7573
Titre abrégé: Nanoscale Res Lett
Pays: United States
ID NLM: 101279750
Informations de publication
Date de publication:
21 Nov 2019
21 Nov 2019
Historique:
received:
13
08
2019
accepted:
31
10
2019
entrez:
23
11
2019
pubmed:
23
11
2019
medline:
23
11
2019
Statut:
epublish
Résumé
AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) suffer from electron overflow and insufficient hole injection. In this paper, novel DUV LED structures with superlattice electron deceleration layer (SEDL) is proposed to decelerate the electrons injected to the active region and improve radiative recombination. The effects of several chirped SEDLs on the performance of DUV LEDs have been studied experimentally and numerically. The DUV LEDs have been grown by metal-organic chemical vapor deposition (MOCVD) and fabricated into 762 × 762 μm
Identifiants
pubmed: 31754922
doi: 10.1186/s11671-019-3201-x
pii: 10.1186/s11671-019-3201-x
pmc: PMC6872697
doi:
Types de publication
Journal Article
Langues
eng
Pagination
347Subventions
Organisme : Key Project of Chinese National Development Programs
ID : 2016YFB0400901
Organisme : Key Laboratory of infrared imaging materials and detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
ID : IIMDKFJJ-17-09
Organisme : National Natural Science Foundation of China
ID : 61774065
Références
Opt Express. 2011 Sep 12;19(19):18319-23
pubmed: 21935200