MoS
2D semiconductors
defect engineering
helium ion microscope
memristors
neuromorphic
sulfur vacancies
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
24 Dec 2019
24 Dec 2019
Historique:
pubmed:
4
12
2019
medline:
4
12
2019
entrez:
3
12
2019
Statut:
ppublish
Résumé
Two-dimensional (2D) layered semiconductors have recently emerged as attractive building blocks for next-generation low-power nonvolatile memories. However, challenges remain in the controllable fabrication of bipolar resistive switching circuit components from these materials. Here, the experimental realization of lateral memtransistors from monolayer single-crystal molybdenum disulfide (MoS
Identifiants
pubmed: 31790198
doi: 10.1021/acsnano.9b07421
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM