Gate-tunable graphene-based Hall sensors on flexible substrates with increased sensitivity.


Journal

Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288

Informations de publication

Date de publication:
02 Dec 2019
Historique:
received: 09 07 2019
accepted: 01 11 2019
entrez: 4 12 2019
pubmed: 4 12 2019
medline: 4 12 2019
Statut: epublish

Résumé

We demonstrate a novel concept for operating graphene-based Hall sensors using an alternating current (AC) modulated gate voltage, which provides three important advantages compared to Hall sensors under static operation: (1) The sensor sensitivity can be doubled by utilizing both n- and p-type conductance. (2) A static magnetic field can be read out at frequencies in the kHz range, where the 1/f noise is lower compared to the static case. (3) The off-set voltage in the Hall signal can be reduced. This significantly increases the signal-to-noise ratio compared to Hall sensors without a gate electrode. A minimal detectable magnetic field B

Identifiants

pubmed: 31792254
doi: 10.1038/s41598-019-54489-0
pii: 10.1038/s41598-019-54489-0
pmc: PMC6889504
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

18059

Subventions

Organisme : European Commission / Graphene Flagship
ID : 785219
Organisme : European Commission / Graphene Flagship
ID : 785219
Organisme : European Commission / Graphene Flagship
ID : 785219
Organisme : European Commission / Graphene Flagship
ID : 785219
Organisme : European Commission / Graphene Flagship
ID : 785219
Organisme : European Commission / Graphene Flagship
ID : 785219
Organisme : German Science Foundation (DFG) / FFlexCom Project (GLECS)
ID : NE1633/3
Organisme : German Science Foundation (DFG) / FFlexCom Project (GLECS)
ID : NE1633/3
Organisme : German Science Foundation (DFG) / FFlexCom Project (GLECS)
ID : NE1633/3
Organisme : German Science Foundation (DFG) / FFlexCom Project (GLECS)
ID : NE1633/3
Organisme : German Science Foundation (DFG) / FFlexCom Project (GLECS)
ID : NE1633/3
Organisme : German Science Foundation (DFG) / FFlexCom Project (GLECS)
ID : NE1633/3

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Auteurs

Burkay Uzlu (B)

Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, 52074, Aachen, Germany. uzlu@amo.de.
Chair of Electronic Devices, RWTH Aachen University, 52074, Aachen, Germany. uzlu@amo.de.

Zhenxing Wang (Z)

Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, 52074, Aachen, Germany.

Sebastian Lukas (S)

Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, 52074, Aachen, Germany.
Chair of Electronic Devices, RWTH Aachen University, 52074, Aachen, Germany.

Martin Otto (M)

Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, 52074, Aachen, Germany.

Max C Lemme (MC)

Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, 52074, Aachen, Germany.
Chair of Electronic Devices, RWTH Aachen University, 52074, Aachen, Germany.

Daniel Neumaier (D)

Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, 52074, Aachen, Germany.

Classifications MeSH