Photogenerated Carrier Transport Properties in Silicon Photovoltaics.
Journal
Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288
Informations de publication
Date de publication:
12 Dec 2019
12 Dec 2019
Historique:
received:
05
08
2019
accepted:
22
11
2019
entrez:
14
12
2019
pubmed:
14
12
2019
medline:
14
12
2019
Statut:
epublish
Résumé
Electrical transport parameters for active layers in silicon (Si) wafer solar cells are determined from free carrier optical absorption using non-contacting optical Hall effect measurements. Majority carrier transport parameters [carrier concentration (N), mobility (μ), and conductivity effective mass (m*)] are determined for both the n-type emitter and p-type bulk wafer Si of an industrially produced aluminum back surface field (Al-BSF) photovoltaic device. From measurements under 0 and ±1.48 T external magnetic fields and nominally "dark" conditions, the following respective [n, p]-type Si parameters are obtained: N = [(3.6 ± 0.1) × 10
Identifiants
pubmed: 31831793
doi: 10.1038/s41598-019-55173-z
pii: 10.1038/s41598-019-55173-z
pmc: PMC6908689
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
19015Références
Sci Rep. 2017 Jul 11;7(1):5151
pubmed: 28698648
J Opt Soc Am A Opt Image Sci Vis. 2003 Feb;20(2):347-56
pubmed: 12570302
J Opt Soc Am A Opt Image Sci Vis. 2016 Aug 1;33(8):1553-68
pubmed: 27505654
Opt Lett. 2015 Jun 15;40(12):2688-91
pubmed: 26076237
Rev Sci Instrum. 2010 Feb;81(2):023101
pubmed: 20192479