Controlled growth of boron-doped epitaxial graphene by thermal decomposition of a B


Journal

Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272

Informations de publication

Date de publication:
03 Apr 2020
Historique:
pubmed: 18 12 2019
medline: 18 12 2019
entrez: 18 12 2019
Statut: ppublish

Résumé

We show that boron-doped epitaxial graphene can be successfully grown by thermal decomposition of a boron carbide thin film, which can also be epitaxially grown on a silicon carbide substrate. The interfaces of B

Identifiants

pubmed: 31846947
doi: 10.1088/1361-6528/ab62cf
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

145711

Auteurs

Classifications MeSH