Controlled growth of boron-doped epitaxial graphene by thermal decomposition of a B
Journal
Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272
Informations de publication
Date de publication:
03 Apr 2020
03 Apr 2020
Historique:
pubmed:
18
12
2019
medline:
18
12
2019
entrez:
18
12
2019
Statut:
ppublish
Résumé
We show that boron-doped epitaxial graphene can be successfully grown by thermal decomposition of a boron carbide thin film, which can also be epitaxially grown on a silicon carbide substrate. The interfaces of B
Identifiants
pubmed: 31846947
doi: 10.1088/1361-6528/ab62cf
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM