Tuning of ionic mobility to improve the resistive switching behavior of Zn-doped CeO


Journal

Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288

Informations de publication

Date de publication:
18 Dec 2019
Historique:
received: 25 07 2019
accepted: 02 12 2019
entrez: 20 12 2019
pubmed: 20 12 2019
medline: 20 12 2019
Statut: epublish

Résumé

Correlation between the resistive switching characteristics of Au/Zn-doped CeO

Identifiants

pubmed: 31852939
doi: 10.1038/s41598-019-55716-4
pii: 10.1038/s41598-019-55716-4
pmc: PMC6920484
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

19387

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Auteurs

Shania Rehman (S)

Department of Electrical Engineering, Sejong University, Seoul, 05006, Republic of Korea.

Honggyun Kim (H)

Department of Electrical Engineering, Sejong University, Seoul, 05006, Republic of Korea.

Muhammad Farooq Khan (M)

Department of Electrical Engineering, Sejong University, Seoul, 05006, Republic of Korea.

Ji-Hyun Hur (JH)

Department of Electrical Engineering, Sejong University, Seoul, 05006, Republic of Korea.

Anthony D Lee (AD)

Department of Mechanical Engineering Technology, Farmingdale State College, Farmingdale, New York, 11735, USA.

Deok-Kee Kim (DK)

Department of Electrical Engineering, Sejong University, Seoul, 05006, Republic of Korea. deokkeekim@sejong.ac.kr.

Classifications MeSH