Bottom-Up Masking of Si/Ge Surfaces and Nanowire Heterostructures
bottom-up
heterostructure
nanowire
pattern
polymer brush
semiconductor
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
28 Jan 2020
28 Jan 2020
Historique:
pubmed:
20
12
2019
medline:
20
12
2019
entrez:
20
12
2019
Statut:
ppublish
Résumé
The fully bottom-up and scalable synthesis of complex micro/nanoscale materials and functional devices requires masking methods to define key features and direct the deposition of various coatings and films. Here, we demonstrate selective coaxial lithography
Identifiants
pubmed: 31854980
doi: 10.1021/acsnano.9b04363
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM