Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden-Popper Perovskites for Non-volatile Memories.
Journal
The journal of physical chemistry letters
ISSN: 1948-7185
Titre abrégé: J Phys Chem Lett
Pays: United States
ID NLM: 101526034
Informations de publication
Date de publication:
16 Jan 2020
16 Jan 2020
Historique:
pubmed:
25
12
2019
medline:
25
12
2019
entrez:
25
12
2019
Statut:
ppublish
Résumé
Ion migration, one origin of current-voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered Ruddlesdsen-Popper perovskites (RPPs) and explicate the underlying mechanisms. The ON/OFF ratio of RPP-based devices is strongly dependent on the layers and peaks at
Identifiants
pubmed: 31873017
doi: 10.1021/acs.jpclett.9b03181
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM