Artificial Optoelectronic Synapses Based on Ferroelectric Field-Effect Enabled 2D Transition Metal Dichalcogenide Memristive Transistors.

ferroelectric ferroelectric memory memristive transistor optoelectronic device two-dimensional material

Journal

ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589

Informations de publication

Date de publication:
28 01 2020
Historique:
pubmed: 31 12 2019
medline: 31 12 2019
entrez: 31 12 2019
Statut: ppublish

Résumé

Neuromorphic visual sensory and memory systems, which can perceive, process, and memorize optical information, represent core technology for artificial intelligence and robotics with autonomous navigation. An optoelectronic synapse with an elegant integration of biometric optical sensing and synaptic learning functions can be a fundamental element for the hardware-implementation of such systems. Here, we report a class of ferroelectric field-effect memristive transistors made of a two-dimensional WS

Identifiants

pubmed: 31887010
doi: 10.1021/acsnano.9b07687
doi:

Types de publication

Journal Article Research Support, Non-U.S. Gov't

Langues

eng

Sous-ensembles de citation

IM

Pagination

746-754

Auteurs

Zheng-Dong Luo (ZD)

Department of Physics , The University of Warwick , Coventry CV4 7AL , United Kingdom.

Xue Xia (X)

Department of Physics , The University of Warwick , Coventry CV4 7AL , United Kingdom.

Ming-Min Yang (MM)

Department of Physics , The University of Warwick , Coventry CV4 7AL , United Kingdom.

Neil R Wilson (NR)

Department of Physics , The University of Warwick , Coventry CV4 7AL , United Kingdom.

Alexei Gruverman (A)

Department of Physics and Astronomy , University of Nebraska , Lincoln , Nebraska 68588 , United States.

Marin Alexe (M)

Department of Physics , The University of Warwick , Coventry CV4 7AL , United Kingdom.

Classifications MeSH