Artificial Optoelectronic Synapses Based on Ferroelectric Field-Effect Enabled 2D Transition Metal Dichalcogenide Memristive Transistors.
ferroelectric
ferroelectric memory
memristive transistor
optoelectronic device
two-dimensional material
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
28 01 2020
28 01 2020
Historique:
pubmed:
31
12
2019
medline:
31
12
2019
entrez:
31
12
2019
Statut:
ppublish
Résumé
Neuromorphic visual sensory and memory systems, which can perceive, process, and memorize optical information, represent core technology for artificial intelligence and robotics with autonomous navigation. An optoelectronic synapse with an elegant integration of biometric optical sensing and synaptic learning functions can be a fundamental element for the hardware-implementation of such systems. Here, we report a class of ferroelectric field-effect memristive transistors made of a two-dimensional WS
Identifiants
pubmed: 31887010
doi: 10.1021/acsnano.9b07687
doi:
Types de publication
Journal Article
Research Support, Non-U.S. Gov't
Langues
eng
Sous-ensembles de citation
IM