Phononic Helical Nodal Lines with PT Protection in MoB_{2}.


Journal

Physical review letters
ISSN: 1079-7114
Titre abrégé: Phys Rev Lett
Pays: United States
ID NLM: 0401141

Informations de publication

Date de publication:
13 Dec 2019
Historique:
received: 16 08 2019
entrez: 11 1 2020
pubmed: 11 1 2020
medline: 11 1 2020
Statut: ppublish

Résumé

While condensed matter systems host both fermionic and bosonic quasiparticles, reliably predicting and empirically verifying topological states is only mature for Fermionic electronic structures, leaving topological Bosonic excitations sporadically explored. This is unfortunate, as Bosonic systems such as phonons offer the opportunity to assess spinless band structures where nodal lines can be realized without invoking special additional symetries to protect against spin-orbit coupling. Here we combine first-principles calculations and meV-resolution inelastic x-ray scattering to demonstrate the first realization of parity-time reversal symmetry protected helical nodal lines in the phonon spectrum of MoB_{2}. This structure is unique to phononic systems as the spin-orbit coupling present in electronic systems tends to lift the degeneracy away from high-symmetry locations. Our study establishes a protocol to accurately identify topological Bosonic excitations, opening a new route to explore exotic topological states in crystalline materials.

Identifiants

pubmed: 31922848
doi: 10.1103/PhysRevLett.123.245302
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

245302

Auteurs

T T Zhang (TT)

Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
University of Chinese Academy of Sciences, Beijing 100049, China.
Department of Physics, Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo 152-8551, Japan.
Tokodai Institute for Element Strategy, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8503, Japan.

H Miao (H)

Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA.

Q Wang (Q)

Department of Physics and Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-devices, Renmin University of China, Beijing, China.

J Q Lin (JQ)

Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
University of Chinese Academy of Sciences, Beijing 100049, China.
Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA.
School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.

Y Cao (Y)

Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.

G Fabbris (G)

Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA.

A H Said (AH)

Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA.

X Liu (X)

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.

H C Lei (HC)

Department of Physics and Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-devices, Renmin University of China, Beijing, China.

Z Fang (Z)

Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China.

H M Weng (HM)

Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China.

M P M Dean (MPM)

Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA.

Classifications MeSH