Superior polarization retention through engineered domain wall pinning.
Journal
Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555
Informations de publication
Date de publication:
17 Jan 2020
17 Jan 2020
Historique:
received:
02
06
2019
accepted:
11
12
2019
entrez:
19
1
2020
pubmed:
19
1
2020
medline:
19
1
2020
Statut:
epublish
Résumé
Ferroelectric materials possess a spontaneous polarization that is switchable by an electric field. Robust retention of switched polarization is critical for non-volatile nanoelectronic devices based on ferroelectrics, however, these materials often suffer from polarization relaxation, typically within days to a few weeks. Here we exploit designer-defect-engineered epitaxial BiFeO
Identifiants
pubmed: 31953393
doi: 10.1038/s41467-019-14250-7
pii: 10.1038/s41467-019-14250-7
pmc: PMC6969134
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
349Références
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