Influence of Annealing Atmosphere on the Characteristics of Ga
gallium oxide
heterojunction diodes
silicon carbide
thermal activation energy
Journal
Materials (Basel, Switzerland)
ISSN: 1996-1944
Titre abrégé: Materials (Basel)
Pays: Switzerland
ID NLM: 101555929
Informations de publication
Date de publication:
16 Jan 2020
16 Jan 2020
Historique:
received:
26
12
2019
revised:
13
01
2020
accepted:
14
01
2020
entrez:
23
1
2020
pubmed:
23
1
2020
medline:
23
1
2020
Statut:
epublish
Résumé
Ga
Identifiants
pubmed: 31963320
pii: ma13020434
doi: 10.3390/ma13020434
pmc: PMC7013600
pii:
doi:
Types de publication
Journal Article
Langues
eng
Subventions
Organisme : National Research Foundation
ID : 2018R1D1A1B07047515
Organisme : Korea Electric Power Corporation
ID : R17XA05-60
Références
Nanoscale Res Lett. 2019 Jan 7;14(1):8
pubmed: 30617428