Characteristics of GaN-Based Nanowire Gate-All-Around (GAA) Transistors.
Journal
Journal of nanoscience and nanotechnology
ISSN: 1533-4899
Titre abrégé: J Nanosci Nanotechnol
Pays: United States
ID NLM: 101088195
Informations de publication
Date de publication:
01 Jul 2020
01 Jul 2020
Historique:
entrez:
24
1
2020
pubmed:
24
1
2020
medline:
24
1
2020
Statut:
ppublish
Résumé
We investigate the DC,
Identifiants
pubmed: 31968458
doi: 10.1166/jnn.2020.17784
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM