Optomechanical resonating probe for very high frequency sensing of atomic forces.


Journal

Nanoscale
ISSN: 2040-3372
Titre abrégé: Nanoscale
Pays: England
ID NLM: 101525249

Informations de publication

Date de publication:
07 Feb 2020
Historique:
pubmed: 25 1 2020
medline: 25 1 2020
entrez: 25 1 2020
Statut: ppublish

Résumé

Atomic force spectroscopy and microscopy are invaluable tools to characterize nanostructures and biological systems. State-of-the-art experiments use resonant driving of mechanical probes, whose frequency reaches MHz in the fastest commercial instruments where cantilevers are driven at nanometer amplitude. Stiffer probes oscillating at tens of picometers provide a better access to short-range interactions, yielding images of molecular bonds, but they are little amenable to high-speed operation. Next-generation investigations demand combining very high frequency (>100 MHz) with deep sub-nanometer oscillation amplitude, in order to access faster (below microsecond) phenomena with molecular resolution. Here we introduce a resonating optomechanical atomic force probe operated fully optically at a frequency of 117 MHz, two decades above cantilevers, with a Brownian motion amplitude four orders below. Based on Silicon-On-Insulator technology, the very high frequency probe demonstrates single-pixel sensing of contact and non-contact interactions with sub-picometer amplitude, breaking open current limitations for faster and finer force spectroscopy.

Identifiants

pubmed: 31974536
doi: 10.1039/c9nr09690f
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

2939-2945

Auteurs

Pierre Etienne Allain (PE)

Matériaux et Phénomènes Quantiques, Université de Paris, CNRS UMR 7162, Paris, France. ivan.favero@univ-paris-diderot.fr.

Lucien Schwab (L)

Laboratoire d'Analyse et d'Architecture des Systèmes, CNRS UPR 8001, Université de Toulouse, Toulouse, France.

Colin Mismer (C)

Institut d'Electronique, de Microélectronique et de Nanotechnologie, Université de Lille, Centrale Lille, ISEN, Université Polytechnique Hauts-de-France, CNRS UMR 8520, Lille, France.

Marc Gely (M)

Université Grenoble Alpes, CEA, LETI, Minatec Campus, Grenoble, France.

Estelle Mairiaux (E)

Vmicro SAS, Avenue Poincaré, Villeneuve d'Ascq, France.

Maxime Hermouet (M)

Université Grenoble Alpes, CEA, LETI, Minatec Campus, Grenoble, France.

Benjamin Walter (B)

Vmicro SAS, Avenue Poincaré, Villeneuve d'Ascq, France.

Giuseppe Leo (G)

Matériaux et Phénomènes Quantiques, Université de Paris, CNRS UMR 7162, Paris, France. ivan.favero@univ-paris-diderot.fr.

Sébastien Hentz (S)

Université Grenoble Alpes, CEA, LETI, Minatec Campus, Grenoble, France.

Marc Faucher (M)

Institut d'Electronique, de Microélectronique et de Nanotechnologie, Université de Lille, Centrale Lille, ISEN, Université Polytechnique Hauts-de-France, CNRS UMR 8520, Lille, France.

Guillaume Jourdan (G)

Université Grenoble Alpes, CEA, LETI, Minatec Campus, Grenoble, France.

Bernard Legrand (B)

Laboratoire d'Analyse et d'Architecture des Systèmes, CNRS UPR 8001, Université de Toulouse, Toulouse, France.

Ivan Favero (I)

Matériaux et Phénomènes Quantiques, Université de Paris, CNRS UMR 7162, Paris, France. ivan.favero@univ-paris-diderot.fr.

Classifications MeSH