Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination.

Journal

Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555

Informations de publication

Date de publication:
13 Feb 2020
Historique:
received: 30 08 2019
accepted: 27 01 2020
entrez: 15 2 2020
pubmed: 15 2 2020
medline: 15 2 2020
Statut: epublish

Résumé

Graphene/hBN heterostructures are promising active materials for devices in the THz domain, such as emitters and photodetectors based on interband transitions. Their performance requires long carrier lifetimes. However, carrier recombination processes in graphene possess sub-picosecond characteristic times for large non-equilibrium carrier densities at high energy. An additional channel has been recently demonstrated in graphene/hBN heterostructures by emission of hBN hyperbolic phonon polaritons (HPhP) with picosecond decay time. Here, we report on carrier lifetimes in graphene/hBN Zener-Klein transistors of ~30 ps for photoexcited carriers at low density and energy, using mid-infrared photoconductivity measurements. We further demonstrate the switching of carrier lifetime from ~30 ps (attributed to interband Auger) down to a few picoseconds upon ignition of HPhP relaxation at finite bias and/or with infrared excitation power. Our study opens interesting perspectives to exploit graphene/hBN heterostructures for THz lasing and highly sensitive THz photodetection as well as for phonon polariton optics.

Identifiants

DOI: 10.1038/s41467-020-14714-1 PMID: 32054848 PMC: PMC7018796
pubmed: 32054848
doi: 10.1038/s41467-020-14714-1
pii: 10.1038/s41467-020-14714-1
pmc: PMC7018796
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

863

Références

Banszerus, L. et al. Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper. Sci. Adv. 1, e1500222 (2015).
pubmed: 26601221 pmcid: 26601221 doi: 10.1126/sciadv.1500222
Gierz, I. et al. Snapshots of non-equilibrium Dirac carrier distributions in graphene. Nat. Mater. 12, 1119–1124 (2013).
pubmed: 24097235 doi: 10.1038/nmat3757
Winzer, T., Malić, E. & Knorr, A. Microscopic mechanism for transient population inversion and optical gain in graphene. Phys. Rev. B 87, 165413 (2013).
doi: 10.1103/PhysRevB.87.165413
Castilla, S. et al. Fast and sensitive terahertz detection using an antenna-integrated graphene pn junction. Nano Lett. 19, 2765–2773 (2019).
pubmed: 30882226 doi: 10.1021/acs.nanolett.8b04171
Koppens, F. et al. Photodetectors based on graphene, other two-dimensional materials and hybrid systems. Nat. Nanotechnol. 9, 780–793 (2014).
pubmed: 25286273 doi: 10.1038/nnano.2014.215
Jago, R., Winzer, T., Knorr, A. & Malic, E. Graphene as gain medium for broadband lasers. Phys. Rev. B 92, 085407 (2015).
doi: 10.1103/PhysRevB.92.085407
Satou, A., Ryzhii, V., Kurita, Y. & Otsuji, T. Threshold of terahertz population inversion and negative dynamic conductivity in graphene under pulse photoexcitation. J. Appl. Phys. 113, 143108 (2013).
doi: 10.1063/1.4801916
Ryzhii, V., Dubinov, A. A., Otsuji, T., Mitin, V. & Shur, M. S. Terahertz lasers based on optically pumped multiple graphene structures with slot-line and dielectric waveguides. J. Appl. Phys. 107, 054505 (2010).
doi: 10.1063/1.3327212
Tielrooij, K. et al. Photoexcitation cascade and multiple hot-carrier generation in graphene. Nat. Phys. 9, 248–252 (2013).
doi: 10.1038/nphys2564
Mihnev, M. et al. Microscopic origins of the terahertz carrier relaxation and cooling dynamics in graphene. Nat. Commun. 7, 11617 (2016).
pubmed: 27221060 pmcid: 4894949 doi: 10.1038/ncomms11617
Winnerl, S. et al. Time-resolved spectroscopy on epitaxial graphene in the infrared spectral range: relaxation dynamics and saturation behavior. J. Phys. Condens. Matter 25, 054202 (2013).
pubmed: 23441326 doi: 10.1088/0953-8984/25/5/054202
Strait, J. et al. Very slow cooling dynamics of photoexcited carriers in graphene observed by optical-pump terahertz-probe spectroscopy. Nano Lett. 11, 4902–4906 (2011).
pubmed: 21973122 doi: 10.1021/nl202800h
Winzer, T. & Malic, E. The impact of pump fluence on carrier relaxation dynamics in optically excited graphene. J. Phys. Condens. Matter 25, 054201 (2013).
pubmed: 23441325 doi: 10.1088/0953-8984/25/5/054201
Tielrooij, K. et al. Out-of-plane heat transfer in van der Waals stacks through electron–hyperbolic phonon coupling. Nat. Nanotechnol. 13, 41–46 (2018).
pubmed: 29180742 doi: 10.1038/s41565-017-0008-8
Dai, S. et al. Graphene on hexagonal boron nitride as a tunable hyperbolic metamaterial. Nat. Nanotechnol. 10, 682–686 (2015).
pubmed: 26098228 doi: 10.1038/nnano.2015.131
Winnerl, S. et al. Carrier, relaxation in epitaxial graphene photoexcited near the Dirac point. Phys. Rev. Lett. 107, 237401 (2011).
pubmed: 22182122 doi: 10.1103/PhysRevLett.107.237401
Winnerl, S., Jago, R. & Malic, E. Experimentally accessible signatures of Auger scattering in graphene. Phys. Rev. B 94, 235430 (2016).
doi: 10.1103/PhysRevB.94.235430
Vandecasteele, N. et al. Current-voltage characteristics of graphene devices: Interplay between Zener-Klein tunneling and defects. Phys. Rev. B 82, 045416 (2010).
doi: 10.1103/PhysRevB.82.045416
Yang, W. et al. A graphene Zener–Klein transistor cooled by a hyperbolic substrate. Nat. Nanotechnol. 13, 47–52 (2018).
pubmed: 29180743 doi: 10.1038/s41565-017-0007-9
Zhong, H., Zhang, Z., Xu, H., Qiu, C. & Peng, L.-M. Comparison of mobility extraction methods based on field-effect measurements for graphene. AIP Adv. 5, 057136 (2015).
doi: 10.1063/1.4921400
Kane, G., Lazzeri, M. & Mauri, F. High-field transport in graphene: the impact of Zener tunneling. J. Phys. Condens. Matter 27, 164205 (2015).
pubmed: 25835128 doi: 10.1088/0953-8984/27/16/164205
Xia, F. et al. Ultrafast graphene photodetector. Nat. Nanotechnol. 4, 839–843 (2009).
pubmed: 19893532 doi: 10.1038/nnano.2009.292
Freitag, M. et al. Photoconductivity of biased graphene. Nat. Photon 7, 53–59 (2013).
doi: 10.1038/nphoton.2012.314
Schuler, S. et al. Controlled generation of a p–n junction in a waveguide integrated graphene photodetector. Nano Lett. 16, 7107–7112 (2016).
pubmed: 27715060 doi: 10.1021/acs.nanolett.6b03374
Ma, Q. et al. Giant intrinsic photoresponse in pristine graphene. Nat. Nanotechnol. 14, 145–150 (2019).
pubmed: 30559484 doi: 10.1038/s41565-018-0323-8
Malic, E., Winzer, T., Wendler, F. & Knorr, A. Review on carrier multiplication in graphene. Phys. Status Solidi B 253, 2303–2310 (2016).
doi: 10.1002/pssb.201600416
Jago, R., Wendler, F. & Malic, E. Microscopic understanding of the photoconduction effect in graphene. Phys. Rev. B 96, 085431 (2017).
doi: 10.1103/PhysRevB.96.085431
Tomadin, A. et al. The ultrafast dynamics and conductivity of photoexcited graphene at different Fermi energies. Sci. Adv. 4, 2375–2548 (2018).
doi: 10.1126/sciadv.aar5313
Jared, H. et al. Very slow cooling dynamics of photoexcited carriers in graphene observed by optical-pump terahertz-probe spectroscopy. Nano Lett. 11, 4902–4906 (2011).
doi: 10.1021/nl202800h
Nagashio, K., Nishimura, T. & Toriumi, A. Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement. Appl. Phys. Lett. 102, 173507 (2013).
doi: 10.1063/1.4804430
Baudin, E., Voisin, C. & Plaçais, B. Hyperbolic phonon polariton electroluminescence as an electronic cooling pathway. Adv. Funct. Mater. https://doi.org/10.1002/adfm.201904783 (2019).
Rana, F. et al. Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene. Phys. Rev. B 79, 115447 (2009).
doi: 10.1103/PhysRevB.79.115447
Tse, W.-K. & Sarma, S. D. Energy relaxation of hot Dirac fermions in graphene. Phys. Rev. B 79, 235406 (2009).
doi: 10.1103/PhysRevB.79.235406
Graham, M. et al. Photocurrent measurements of supercollision cooling in graphene. Nat. Phys. 9, 103–108 (2013).
doi: 10.1038/nphys2493
Betz, A. et al. Supercollision cooling in undoped graphene. Nat. Phys. 9, 109–112 (2013).
doi: 10.1038/nphys2494
Alymov, G., Vyurkov, V., Ryzhii, V., Satou, A. & Svintsov, D. Auger recombination in Dirac materials: a tangle of many-body effects. Phys. Rev. B 97, 205411 (2018).
doi: 10.1103/PhysRevB.97.205411
Rana, F. Electron-hole generation and recombination rates for Coulomb scattering in graphene. Phys. Rev. B 76, 155431 (2007).
doi: 10.1103/PhysRevB.76.155431
Guo, Q. et al. Efficient electrical detection of mid-infrared graphene plasmons at room temperature. Nat. Mater. 17, 986–992 (2018).
pubmed: 30150622 doi: 10.1038/s41563-018-0157-7
Yao, Y. et al. High-responsivity mid-infrared graphene detectors with antenna-enhanced photocarrier generation and collection. Nano Lett. 14, 3749–3754 (2014).
pubmed: 24940849 doi: 10.1021/nl500602n
König-Otto, J. C. et al. Slow noncollinear Coulomb scattering in the vicinity of the Dirac point in graphene. Phys. Rev. Lett. 117, 087401 (2016).
pubmed: 27588881 doi: 10.1103/PhysRevLett.117.087401
Principi, A. et al. Super-Planckian electron cooling in a van der Waals stack. Phys. Rev. Lett. 118, 126804 (2017).
pubmed: 28388211 doi: 10.1103/PhysRevLett.118.126804
Woessner, A. et al. Electrical detection of hyperbolic phonon-polaritons in heterostructures of graphene and boron nitride. npj 2D Mater. Appl. 1, 25 (2017).
doi: 10.1038/s41699-017-0031-5
Wang, L. et al. One-dimensional electrical contact to a two-dimensional material. Science 342, 614–617 (2013).
doi: 10.1126/science.1244358

Auteurs

P Huang (P)

Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris, 75005, Paris, France.
State Key Laboratory of Precision Spectroscopy, East China Normal University, 200062, Shanghai, China.

E Riccardi (E)

Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris, 75005, Paris, France.

S Messelot (S)

Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris, 75005, Paris, France.

H Graef (H)

Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris, 75005, Paris, France.

F Valmorra (F)

Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris, 75005, Paris, France.

J Tignon (J)

Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris, 75005, Paris, France.

T Taniguchi (T)

Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki, 305-0047, Japan.

K Watanabe (K)

Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki, 305-0047, Japan.

S Dhillon (S)

Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris, 75005, Paris, France.

B Plaçais (B)

Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris, 75005, Paris, France.

R Ferreira (R)

Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris, 75005, Paris, France.

J Mangeney (J)

Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris, 75005, Paris, France. juliette.mangeney@ens.fr.

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