Creating zero-field skyrmions in exchange-biased multilayers through X-ray illumination.


Journal

Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555

Informations de publication

Date de publication:
19 Feb 2020
Historique:
received: 14 11 2018
accepted: 29 01 2020
entrez: 21 2 2020
pubmed: 23 2 2020
medline: 23 2 2020
Statut: epublish

Résumé

Skyrmions, magnetic textures with topological stability, hold promises for high-density and energy-efficient information storage devices owing to their small size and low driving-current density. Precise creation of a single nanoscale skyrmion is a prerequisite to further understand the skyrmion physics and tailor skyrmion-based applications. Here, we demonstrate the creation of individual skyrmions at zero-field in an exchange-biased magnetic multilayer with exposure to soft X-rays. In particular, a single skyrmion with 100-nm size can be created at the desired position using a focused X-ray spot of sub-50-nm size. This single skyrmion creation is driven by the X-ray-induced modification of the antiferromagnetic order and the corresponding exchange bias. Furthermore, artificial skyrmion lattices with various arrangements can be patterned using X-ray. These results demonstrate the potential of accurate optical control of single skyrmion at sub-100 nm scale. We envision that X-ray could serve as a versatile tool for local manipulation of magnetic orders.

Identifiants

pubmed: 32075968
doi: 10.1038/s41467-020-14769-0
pii: 10.1038/s41467-020-14769-0
pmc: PMC7031520
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

949

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Auteurs

Yao Guang (Y)

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.

Iuliia Bykova (I)

Max Planck Institute for Intelligent Systems, Heisenbergstraße 3, 70569, Stuttgart, Germany.

Yizhou Liu (Y)

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.

Guoqiang Yu (G)

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China. guoqiangyu@iphy.ac.cn.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China. guoqiangyu@iphy.ac.cn.
Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China. guoqiangyu@iphy.ac.cn.

Eberhard Goering (E)

Max Planck Institute for Intelligent Systems, Heisenbergstraße 3, 70569, Stuttgart, Germany.

Markus Weigand (M)

Max Planck Institute for Intelligent Systems, Heisenbergstraße 3, 70569, Stuttgart, Germany.

Joachim Gräfe (J)

Max Planck Institute for Intelligent Systems, Heisenbergstraße 3, 70569, Stuttgart, Germany.

Se Kwon Kim (SK)

Department of Physics and Astronomy, University of California, Los Angeles, CA, 90095, USA.
Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA.

Junwei Zhang (J)

Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou, 730000, People's Republic of China.

Hong Zhang (H)

Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou, 730000, People's Republic of China.

Zhengren Yan (Z)

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.

Caihua Wan (C)

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.

Jiafeng Feng (J)

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.

Xiao Wang (X)

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.

Chenyang Guo (C)

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.

Hongxiang Wei (H)

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.

Yong Peng (Y)

Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou, 730000, People's Republic of China.

Yaroslav Tserkovnyak (Y)

Department of Physics and Astronomy, University of California, Los Angeles, CA, 90095, USA.

Xiufeng Han (X)

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.

Gisela Schütz (G)

Max Planck Institute for Intelligent Systems, Heisenbergstraße 3, 70569, Stuttgart, Germany.

Classifications MeSH