A Nontoxic Bifunctional (Anti)Solvent as Digestive-Ripening Agent for High-Performance Perovskite Solar Cells.

antisolvents digestive ripening methyl benzoate perovskites solvents thermal annealing

Journal

Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358

Informations de publication

Date de publication:
Apr 2020
Historique:
received: 30 10 2019
revised: 21 01 2020
pubmed: 23 2 2020
medline: 23 2 2020
entrez: 22 2 2020
Statut: ppublish

Résumé

The preparation of high-quality perovskite films is important for achieving high-performance perovskite solar cells (PSCs). The effective balance between solvent and antisolvent is an essential factor for regulating high-quality perovskite film during the spin-coating and thermal-annealing steps. In this work, a greener, nonhalogenated, nontoxic bifunctional (anti)solvent, methyl benzoate (MB), is developed not only as an antisolvent to rapidly generate crystal seeds at the perovskite spin-coating step, but also as a digestive-ripening solvent for the perovskite precursors, which can prevent the loss of organic components during the thermal-annealing stage and effectively suppress the formation of miscellaneous lead halide phases. As a result, this novel bifunctional (anti)solvent is employed in planar n-i-p PSCs for engineering high-quality perovskite layers and thus achieving a power conversion efficiency up to 22.37% with negligible hysteresis and >1300 h stability. Moreover, due to the high boiling point and low-volatility characteristic of MB, high-performance PSCs are achieved reproducibly at different operating temperatures (22-34 °C). Therefore, this developed bifunctional solvent system can provide a promising platform toward globally upscaling and commercializing PSCs in all seasons and regions.

Identifiants

pubmed: 32083790
doi: 10.1002/adma.201907123
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

e1907123

Subventions

Organisme : National Key Research and Development Program of China
ID : 2017YFE0131900
Organisme : National Key Research and Development Program of China
ID : 2017YFB0404500
Organisme : National Natural Science Foundation of China
ID : 91833306
Organisme : National Natural Science Foundation of China
ID : 91733302
Organisme : National Natural Science Foundation of China
ID : 21601085

Informations de copyright

© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Auteurs

Yikai Yun (Y)

Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NJ Tech), 5 Xinmofan Road, Nanjing, 210009, P. R. China.

Fangfang Wang (F)

Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NJ Tech), 5 Xinmofan Road, Nanjing, 210009, P. R. China.

Hongyan Huang (H)

Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NJ Tech), 5 Xinmofan Road, Nanjing, 210009, P. R. China.
Ian Wark Laboratory, CSIRO Materials Science and Engineering, Victoria, Clayton South, 3169, Australia.

Yinyu Fang (Y)

Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NJ Tech), 5 Xinmofan Road, Nanjing, 210009, P. R. China.

Sizhou Liu (S)

Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NJ Tech), 5 Xinmofan Road, Nanjing, 210009, P. R. China.

Wenchao Huang (W)

Department of Materials Science and Engineering, Monash University, Victoria, Clayton, 3800, Australia.

Zhengchun Cheng (Z)

Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NJ Tech), 5 Xinmofan Road, Nanjing, 210009, P. R. China.

You Liu (Y)

Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NJ Tech), 5 Xinmofan Road, Nanjing, 210009, P. R. China.

Yezhou Cao (Y)

Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NJ Tech), 5 Xinmofan Road, Nanjing, 210009, P. R. China.

Mei Gao (M)

Ian Wark Laboratory, CSIRO Materials Science and Engineering, Victoria, Clayton South, 3169, Australia.

Lin Zhu (L)

Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NJ Tech), 5 Xinmofan Road, Nanjing, 210009, P. R. China.

Lin Wang (L)

Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NJ Tech), 5 Xinmofan Road, Nanjing, 210009, P. R. China.

Tianshi Qin (T)

Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NJ Tech), 5 Xinmofan Road, Nanjing, 210009, P. R. China.

Wei Huang (W)

Key Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an, 710072, P. R. China.

Classifications MeSH