Fabrication and Evaluation of N-Channel GaN Metal-Oxide-Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods.

We have demonstrated the enhancement-mode n-channel gallium nitride (GaN) metal-oxide field-effect transistors (MOSFETs) on homoepitaxial GaN substrates using the selective area regrowth and ion implantation techniques. Both types of MOSFETs perform normally off operations. The GaN-MOSFETs fabricated using the regrowth method perform superior characteristics over the other relative devices fabricated using the ion implantation technique. The electron mobility of 100 cm