Resonant Photovoltaic Effect in Doped Magnetic Semiconductors.


Journal

Physical review letters
ISSN: 1079-7114
Titre abrégé: Phys Rev Lett
Pays: United States
ID NLM: 0401141

Informations de publication

Date de publication:
28 Feb 2020
Historique:
received: 22 10 2019
accepted: 05 02 2020
entrez: 14 3 2020
pubmed: 14 3 2020
medline: 14 3 2020
Statut: ppublish

Résumé

The rectified nonlinear response of a clean, time-reversal symmetric, undoped semiconductor to an ac electric field includes a well known intrinsic shift current. We show that when Kramers degeneracy is broken, a distinct second order rectified response appears due to Bloch state anomalous velocities in a system with an oscillating Fermi surface. This effect, which we refer to as the resonant photovoltaic effect, produces a resonant galvanic current peak at the interband absorption threshold in doped semiconductors or semimetals with approximate particle-hole symmetry. We evaluate the resonant photovoltaic effect for a model of the surface states of a magnetized topological insulator.

Identifiants

pubmed: 32167346
doi: 10.1103/PhysRevLett.124.087402
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

087402

Auteurs

Pankaj Bhalla (P)

Beijing Computational Science Research Center, Beijing 100193, China.
School of Physics, University of New South Wales, Sydney 2052, Australia.
ARC Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales Node, Sydney 2052, Australia.

Allan H MacDonald (AH)

Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA.

Dimitrie Culcer (D)

School of Physics, University of New South Wales, Sydney 2052, Australia.
ARC Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales Node, Sydney 2052, Australia.

Classifications MeSH