Resonant Photovoltaic Effect in Doped Magnetic Semiconductors.
Journal
Physical review letters
ISSN: 1079-7114
Titre abrégé: Phys Rev Lett
Pays: United States
ID NLM: 0401141
Informations de publication
Date de publication:
28 Feb 2020
28 Feb 2020
Historique:
received:
22
10
2019
accepted:
05
02
2020
entrez:
14
3
2020
pubmed:
14
3
2020
medline:
14
3
2020
Statut:
ppublish
Résumé
The rectified nonlinear response of a clean, time-reversal symmetric, undoped semiconductor to an ac electric field includes a well known intrinsic shift current. We show that when Kramers degeneracy is broken, a distinct second order rectified response appears due to Bloch state anomalous velocities in a system with an oscillating Fermi surface. This effect, which we refer to as the resonant photovoltaic effect, produces a resonant galvanic current peak at the interband absorption threshold in doped semiconductors or semimetals with approximate particle-hole symmetry. We evaluate the resonant photovoltaic effect for a model of the surface states of a magnetized topological insulator.
Identifiants
pubmed: 32167346
doi: 10.1103/PhysRevLett.124.087402
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM