New approach for the molecular beam epitaxy growth of scalable WSe
Journal
Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272
Informations de publication
Date de publication:
03 Apr 2020
03 Apr 2020
Historique:
pubmed:
19
3
2020
medline:
19
3
2020
entrez:
19
3
2020
Statut:
ppublish
Résumé
The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation. Here, we use molecular beam epitaxy to grow WSe
Identifiants
pubmed: 32187582
doi: 10.1088/1361-6528/ab80fe
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM