Graphene bandgap induced by ferroelectric HfO
Journal
Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272
Informations de publication
Date de publication:
17 Apr 2020
17 Apr 2020
Historique:
pubmed:
20
3
2020
medline:
20
3
2020
entrez:
20
3
2020
Statut:
ppublish
Résumé
Motivated by the need to open a bandgap in graphene, we show experimentally that the CMOS-compatible ferroelectric HfZrO substrate induces a bandgap of 0.18 eV in graphene monolayer, which allows top-gate graphene/HfZrO/SiO
Identifiants
pubmed: 32191931
doi: 10.1088/1361-6528/ab814b
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM