Three-Dimensional Electronic Network Assisted by TiN Conductive Pillars and Chemical Adsorption to Boost the Electrochemical Performance of Red Phosphorus.
3d electron network
TiN as conductive pillar
chemical adsorption of red phosphorus
graphene restacking suppression
sodium-ion batteries
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
28 Apr 2020
28 Apr 2020
Historique:
pubmed:
2
4
2020
medline:
2
4
2020
entrez:
2
4
2020
Statut:
ppublish
Résumé
The practical application of red phosphorus (P) for sodium-ion batteries (SIBs) is retarded by its poor reversibility and its unstable cycling life derived from its poor conductivity and huge volume expansion. Graphene is considered as an ideal matrix to remedy these weaknesses due to its excellent conductivity and two-dimensional structure. Its π-π restacking causes spatial collapse, however, meaning that graphene cannot effectively buffer volume expansion. Herein, multifunctional TiN is introduced into a P composite to fix this issue. TiN acts as conductive pillars, electron transfer bridges, and a chemical adsorbent of phosphorus in the composite, to prevent the graphene nanoplates from restacking, to bridge gaps between the graphene nanoplates, and to chemically adsorb the P, resulting in the formation of a three-dimensional electronic network and endowing the pulverized P particles with good contact with the conductive matrix to avoid forming insulating "dead P". Consequently, the P composite presents excellent performance for SIBs.
Identifiants
pubmed: 32227862
doi: 10.1021/acsnano.0c00216
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM