Monitoring the hemostasis process through the electrical characteristics of a graphene-based field-effect transistor.


Journal

Biosensors & bioelectronics
ISSN: 1873-4235
Titre abrégé: Biosens Bioelectron
Pays: England
ID NLM: 9001289

Informations de publication

Date de publication:
01 Jun 2020
Historique:
received: 12 12 2019
revised: 05 02 2020
accepted: 20 03 2020
pubmed: 7 4 2020
medline: 12 1 2021
entrez: 7 4 2020
Statut: ppublish

Résumé

Graphene-based transistors are promising devices in the evaluation of carrier density in biological analytes. We report on the design and fabrication of a graphene-based field-effect transistor for monitoring and assessing the interaction between the coagulation factors based on the charge carrier density in a blood sample. When biochemical reactions occurred during the coagulation cascade process, a dopant effect was noticed on the graphene surface by the change in Dirac point voltage values. Additional experiments were performed using blood samples treated with activators (vitamin K, calcium chloride, and thromboplastin reagent) and inhibitors (heparin drugs) to evaluate the selectivity of the graphene field-effect transistor devices. Since the transfer characteristic curves presented divergent behaviours for different levels of procoagulants and anticoagulants, the measurements showed that the devices can assess changes in the concentrations of factors that inhibit or accelerate the cascade process when using untreated and treated samples. Reproducibility was verified by testing samples from different sources. To the best of our knowledge, this study is the first to demonstrate the potential of graphene in monitoring the hemostasis process through the analysis of the electrical properties of human whole blood.

Identifiants

pubmed: 32250937
pii: S0956-5663(20)30165-2
doi: 10.1016/j.bios.2020.112167
pii:
doi:

Substances chimiques

Anticoagulants 0
Coagulants 0
Graphite 7782-42-5

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

112167

Informations de copyright

Copyright © 2020 Elsevier B.V. All rights reserved.

Déclaration de conflit d'intérêts

Declaration of competing interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Auteurs

Ariadna Schuck (A)

Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of Korea; Electrical Engineering Graduate Program and itt CHIP - Semiconductor Institute, Universidade do Vale do Rio dos Sinos, São Leopoldo, Brazil.

Hyo Eun Kim (HE)

Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of Korea.

Kyung-Mo Jung (KM)

Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of Korea.

Willyan Hasenkamp (W)

Electrical Engineering Graduate Program and itt CHIP - Semiconductor Institute, Universidade do Vale do Rio dos Sinos, São Leopoldo, Brazil.

Yong-Sang Kim (YS)

Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of Korea. Electronic address: yongsang@skku.edu.

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Classifications MeSH