Near-Unity Light Absorption in a Monolayer WS

2D materials Exciton complexes Light-matter interaction TMD Excitons Unity absorption

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
13 May 2020
Historique:
pubmed: 14 4 2020
medline: 14 4 2020
entrez: 14 4 2020
Statut: ppublish

Résumé

Excitons in monolayer transition-metal-dichalcogenides (TMDs) dominate their optical response and exhibit strong light-matter interactions with lifetime-limited emission. While various approaches have been applied to enhance light-exciton interactions in TMDs, the achieved strength have been far below unity, and a complete picture of its underlying physical mechanisms and fundamental limits has not been provided. Here, we introduce a TMD-based van der Waals heterostructure cavity that provides near-unity excitonic absorption, and emission of excitonic complexes that are observed at ultralow excitation powers. Our results are in full agreement with a quantum theoretical framework introduced to describe the light-exciton-cavity interaction. We find that the subtle interplay between the radiative, nonradiative and dephasing decay rates plays a crucial role, and unveil a universal absorption law for excitons in 2D systems. This enhanced light-exciton interaction provides a platform for studying excitonic phase-transitions and quantum nonlinearities and enables new possibilities for 2D semiconductor-based optoelectronic devices.

Identifiants

pubmed: 32283034
doi: 10.1021/acs.nanolett.0c00492
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

3545-3552

Auteurs

Itai Epstein (I)

ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Barcelona, Spain.

Bernat Terrés (B)

ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Barcelona, Spain.

André J Chaves (AJ)

Grupo de Materiais Semicondutores e Nanotecnologia and Departamento de Física, Instituto Tecnológico de Aeronáutica, DCTA, 12228-900 São José dos Campos,Brazil.

Varun-Varma Pusapati (VV)

ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Barcelona, Spain.

Daniel A Rhodes (DA)

Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States.

Bettina Frank (B)

Fourth Physics Institute and Research Center SCoPE, University of Stuttgart, 70569 Stuttgart, Germany.

Valentin Zimmermann (V)

Fourth Physics Institute and Research Center SCoPE, University of Stuttgart, 70569 Stuttgart, Germany.

Ying Qin (Y)

School for Engineering of Matter Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States.

Kenji Watanabe (K)

National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

Takashi Taniguchi (T)

National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

Harald Giessen (H)

Fourth Physics Institute and Research Center SCoPE, University of Stuttgart, 70569 Stuttgart, Germany.

Sefaattin Tongay (S)

School for Engineering of Matter Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States.

James C Hone (JC)

Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States.

Nuno M R Peres (NMR)

Centro de Física and Departamento de Física and QuantaLab, Universidade do Minho, P-4710-057 Braga, Portugal.
International Iberian Nanotechnology Laboratory (INL), Avenida Mestre José Veiga, 4715-330 Braga, Portugal.

Frank H L Koppens (FHL)

ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Barcelona, Spain.
ICREA-Institució Catalana de Recerca i Estudis Avançats, 08010 Barcelona, Spain.

Classifications MeSH