Broadband, wide-angle antireflection in GaAs through surface nano-structuring for solar cell applications.
Journal
Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288
Informations de publication
Date de publication:
14 Apr 2020
14 Apr 2020
Historique:
received:
20
11
2019
accepted:
27
03
2020
entrez:
15
4
2020
pubmed:
15
4
2020
medline:
15
4
2020
Statut:
epublish
Résumé
We demonstrate broadband and wide-angle antireflective surface nanostructuring in GaAs semiconductors using variable dose electron-beam lithography (EBL). Various designed structures are written with EBL on a positive EB-resist coated GaAs and developed followed by shallow inductively coupled plasma etching. An optimized nanostructured surface shows a reduced surface reflectivity down to less than 2.5% in the visible range of 450-700 nm and an average reflectance of less than 4% over a broad near-infrared wavelength range from 900-1400 nm. The results are obtained over a wide incidence angle of 33.3°. This study shows the potential for anti-reflective structures using a simpler reverse EBL process which can provide optical absorption or extraction efficiency enhancement in semiconductors relevant to improved performance in solar photovoltaics or light-emitting diodes.
Identifiants
pubmed: 32286418
doi: 10.1038/s41598-020-63327-7
pii: 10.1038/s41598-020-63327-7
pmc: PMC7156764
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
6269Références
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