Molecular Approach for Engineering Interfacial Interactions in Magnetic/Topological Insulator Heterostructures.

X-ray magnetic circular dichroism angle-resolved photoelectron spectroscopy density functional theory interfacial interactions metal−organic molecules scanning tunneling microscopy topological insulators

Journal

ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589

Informations de publication

Date de publication:
26 May 2020
Historique:
pubmed: 16 4 2020
medline: 16 4 2020
entrez: 16 4 2020
Statut: ppublish

Résumé

Controlling interfacial interactions in magnetic/topological insulator heterostructures is a major challenge for the emergence of novel spin-dependent electronic phenomena. As for any rational design of heterostructures that rely on proximity effects, one should ideally retain the overall properties of each component while tuning interactions at the interface. However, in most inorganic interfaces, interactions are too strong, consequently perturbing, and even quenching, both the magnetic moment and the topological surface states at each side of the interface. Here, we show that these properties can be preserved using ligand chemistry to tune the interaction of magnetic ions with the surface states. By depositing Co-based porphyrin and phthalocyanine monolayers on the surface of Bi

Identifiants

pubmed: 32293865
doi: 10.1021/acsnano.0c02498
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

6285-6294

Auteurs

Marc G Cuxart (MG)

Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Barcelona, Spain.

Miguel Angel Valbuena (MA)

Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Barcelona, Spain.

Roberto Robles (R)

Centro de Fı́sica de Materiales CFM/MPC (CSIC-UPV/EHU), 20018 Donostia-San Sebastián Spain.

César Moreno (C)

Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Barcelona, Spain.

Frédéric Bonell (F)

Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Barcelona, Spain.

Guillaume Sauthier (G)

Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Barcelona, Spain.

Inhar Imaz (I)

Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Barcelona, Spain.

Heng Xu (H)

Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Barcelona, Spain.

Corneliu Nistor (C)

Department of Materials, ETH Zurich, Hönggerbergring 64, CH-8093 Zurich, Switzerland.

Alessandro Barla (A)

Istituto di Struttura della Materia (ISM), Consiglio Nazionale delle Ricerche (CNR), I-34149 Trieste, Italy.

Pierluigi Gargiani (P)

ALBA Synchrotron Light Source, Carretera BP 1413km 3.3, E-08290 Cerdanyola del Vallès, Spain.

Manuel Valvidares (M)

ALBA Synchrotron Light Source, Carretera BP 1413km 3.3, E-08290 Cerdanyola del Vallès, Spain.

Daniel Maspoch (D)

Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Barcelona, Spain.
Institució Catalana de Recerca i Estudis Avançats (ICREA), 08070 Barcelona, Spain.

Pietro Gambardella (P)

Department of Materials, ETH Zurich, Hönggerbergring 64, CH-8093 Zurich, Switzerland.

Sergio O Valenzuela (SO)

Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Barcelona, Spain.
Institució Catalana de Recerca i Estudis Avançats (ICREA), 08070 Barcelona, Spain.

Aitor Mugarza (A)

Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Barcelona, Spain.
Institució Catalana de Recerca i Estudis Avançats (ICREA), 08070 Barcelona, Spain.

Classifications MeSH