Mode properties of telecom wavelength InP-based high-(Q/V) L4/3 photonic crystal cavities.


Journal

Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272

Informations de publication

Date de publication:
31 Jul 2020
Historique:
pubmed: 18 4 2020
medline: 18 4 2020
entrez: 18 4 2020
Statut: ppublish

Résumé

We present finite-difference time domain simulations and optical characterizations via micro-photoluminescence measurements of InP-based L4/3 photonic crystal cavities with embedded quantum dots (QDs) and designed for the M1 ground mode to be emitting at telecom C-band wavelengths. The simulated M1 Q-factor values exceed 10

Identifiants

pubmed: 32303021
doi: 10.1088/1361-6528/ab8a8c
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

315703

Auteurs

L Rickert (L)

Institute of Nanostructure Technologies and Analytics (INA), Center of Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Heinrich-Plett-Straße 40, Kassel 34132, Germany.

Classifications MeSH