Selective multi-nanosoldering for fabrication of advanced solution-processed micro/nanoscale metal grid structures.


Journal

Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288

Informations de publication

Date de publication:
22 Apr 2020
Historique:
received: 03 12 2019
accepted: 29 03 2020
entrez: 24 4 2020
pubmed: 24 4 2020
medline: 24 4 2020
Statut: epublish

Résumé

Solution-processed metal grid transparent conductors with low sheet resistance, high optical transmittance and good mechanical flexibility have great potential for use in flexible optoelectronic devices. However, there are still remaining challenges to improve optoelectrical properties and electromechanical stability of the metallic structures due to random loose packings of nanoparticles and the existence of many pores. Here we introduce a selective multi-nanosoldering method to generate robust metallic layers on the thin metal grid structures (< a thickness of 200 nm), which are generated via self-pining assisted direct inking of silver ions. The selective multi-nanosoldering leads to lowering the sheet resistance of the metal grid transparent conductors, while keeping the optical transmittance constant. Also, it reinforces the electromechanical stability of flexible metal grid transparent conductors against a small bending radius or a repeated loading. Finally, organic light-emitting diodes based on the flexible metal grid transparent conductors are demonstrated. Our approach can open a new route to enhance the functionality of metallic structures fabricated using a variety of solution-processed metal patterning methods for next-generation optoelectronic and micro/nanoelectronic applications.

Identifiants

pubmed: 32321964
doi: 10.1038/s41598-020-63695-0
pii: 10.1038/s41598-020-63695-0
pmc: PMC7176656
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

6782

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Auteurs

Y S Oh (YS)

Department of Mechanical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea.

J Lee (J)

School of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea.

D Y Choi (DY)

Department of Mechanical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea.

H Lee (H)

School of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea.

K Kang (K)

Department of Mechanical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea.

S Yoo (S)

School of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea.

I Park (I)

Department of Mechanical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea. inkyu@kaist.ac.kr.

H J Sung (HJ)

Department of Mechanical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea. hjsung@kaist.ac.kr.

Classifications MeSH