Dataset for the comparison of vacuum-treated and as-etched porous silicon samples in terms of the evolution of oxidation at low temperatures.
Infrared spectroscopy
Oxidation
Photoluminescence
Porous silicon
Journal
Data in brief
ISSN: 2352-3409
Titre abrégé: Data Brief
Pays: Netherlands
ID NLM: 101654995
Informations de publication
Date de publication:
Jun 2020
Jun 2020
Historique:
received:
04
12
2019
revised:
05
03
2020
accepted:
17
03
2020
entrez:
24
4
2020
pubmed:
24
4
2020
medline:
24
4
2020
Statut:
epublish
Résumé
The development of chemical sensors made from porous silicon is a task that has been addressed for several years. In order to have a reliable sensing material, stability must be guaranteed. Oxidation in silicon degrades the sensing capability. The data presented in this article provides some important insights concerning the treatment of samples that can improve the material stability against oxidation. For this purpose, Fourier Transformed Infrared (FTIR) measurements using an Attenuated Total Reflectance (ATR) additament were employed to extract information concerning oxidation on the samples submitted to different temperatures. Photoluminescent (PL) measurements were also performed on the samples in order to extract information on nanocrystals sizes and their relationship with oxidation.
Identifiants
pubmed: 32322623
doi: 10.1016/j.dib.2020.105475
pii: S2352-3409(20)30369-3
pii: 105475
pmc: PMC7160521
doi:
Types de publication
Journal Article
Langues
eng
Pagination
105475Informations de copyright
© 2020 The Author(s).