A Chemically Polished Zinc Metal Electrode with a Ridge-like Structure for Cycle-Stable Aqueous Batteries.

aqueous zinc metal battery chemical polishing homogeneous plating passivation layer ridge-like structure

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
20 May 2020
Historique:
pubmed: 25 4 2020
medline: 25 4 2020
entrez: 25 4 2020
Statut: ppublish

Résumé

Aqueous rechargeable zinc (Zn) metal batteries show great application prospects in grid-scale energy storage devices due to their good safety, low cost, and considerable energy density. However, the electrical and topographical inhomogeneity caused by the native passivation layer of metallic Zn foil leads to inhomogeneous electrochemical plating and stripping of metallic Zn, and the limited accessible area to the electrolyte of the regular foil electrode causes the poor rate capability, which together hinder the practical application of the Zn metal electrode in rechargeable aqueous batteries. In this work, we show that the native passivation layer on the Zn foil electrode can be removed by a simple chemical polishing strategy, associated with the formation of a three-dimensional ridge-like structure of metallic Zn (r-Zn) on the surface of the Zn foil electrode due to the selective etching of weak crystallographic planes and grain boundary of metallic Zn. The clean and uniform surface of the metallic Zn electrode enables homogeneous plating and stripping of metallic Zn, and the ridge-like structure of r-Zn increases the accessible surface area to the electrolyte and reduces the local current density, which elevates the electrochemical performance of the Zn metal anode with regard to the cycling stability and rate capability. It is demonstrated that a r-Zn anode cycles stably for over 200 h at 1 mA cm

Identifiants

pubmed: 32329612
doi: 10.1021/acsami.0c05661
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

23028-23034

Auteurs

Jindi Wang (J)

Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.

Zhao Cai (Z)

Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.

Run Xiao (R)

Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.

Yangtao Ou (Y)

Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.

Renming Zhan (R)

Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.

Zhu Yuan (Z)

Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.

Yongming Sun (Y)

Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.

Classifications MeSH