Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures.
Schottky barrier
conductive atomic force microscopy
conductivity
heterostructures
transition metal dichalcogenides
Journal
Nanomaterials (Basel, Switzerland)
ISSN: 2079-4991
Titre abrégé: Nanomaterials (Basel)
Pays: Switzerland
ID NLM: 101610216
Informations de publication
Date de publication:
22 Apr 2020
22 Apr 2020
Historique:
received:
31
03
2020
revised:
16
04
2020
accepted:
17
04
2020
entrez:
26
4
2020
pubmed:
26
4
2020
medline:
26
4
2020
Statut:
epublish
Résumé
Semiconducting transition metal dichalcogenides (TMDs) are promising materials for future electronic and optoelectronic applications. However, their electronic properties are strongly affected by peculiar nanoscale defects/inhomogeneities (point or complex defects, thickness fluctuations, grain boundaries, etc.), which are intrinsic of these materials or introduced during device fabrication processes. This paper reviews recent applications of conductive atomic force microscopy (C-AFM) to the investigation of nanoscale transport properties in TMDs, discussing the implications of the local phenomena in the overall behavior of TMD-based devices. Nanoscale resolution current spectroscopy and mapping by C-AFM provided information on the Schottky barrier uniformity and shed light on the mechanisms responsible for the Fermi level pinning commonly observed at metal/TMD interfaces. Methods for nanoscale tailoring of the Schottky barrier in MoS
Identifiants
pubmed: 32331313
pii: nano10040803
doi: 10.3390/nano10040803
pmc: PMC7221570
pii:
doi:
Types de publication
Journal Article
Review
Langues
eng
Subventions
Organisme : Ministero dell'Istruzione, dell'Università e della Ricerca
ID : FlagERA-JTC2015 project "GraNitE"
Organisme : Ministero dell'Istruzione, dell'Università e della Ricerca
ID : FlagERA-JTC2019 project "ETMOS"
Déclaration de conflit d'intérêts
The authors declare no conflict of interest.
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