Surfactant-Mediated Growth and Patterning of Atomically Thin Transition Metal Dichalcogenides.

MoS2 edge passivation lithography-free patterning strain surfactant

Journal

ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589

Informations de publication

Date de publication:
23 Jun 2020
Historique:
pubmed: 28 4 2020
medline: 28 4 2020
entrez: 28 4 2020
Statut: ppublish

Résumé

The role of additives in facilitating the growth of conventional semiconducting thin films is well-established. Apparently, their presence is also decisive in the growth of two-dimensional transition metal dichalcogenides (TMDs), yet their role remains ambiguous. In this work, we show that the use of sodium bromide enables synthesis of TMD monolayers

Identifiants

DOI: 10.1021/acsnano.0c00132 PMID: 32338865
pubmed: 32338865
doi: 10.1021/acsnano.0c00132
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

6570-6581

Auteurs

Xufan Li (X)

Honda Research Institute USA Inc., San Jose, California 95134, United States.
ORCID: 0000-0001-9814-0383

Ethan Kahn (E)

Honda Research Institute USA Inc., San Jose, California 95134, United States.
Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.

Gugang Chen (G)

Honda Research Institute USA Inc., San Jose, California 95134, United States.
ORCID: 0000-0003-3798-320X

Xiahan Sang (X)

Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.

Jincheng Lei (J)

Department of Materials Science and Nano Engineering, Rice University, Houston, Texas 77005, United States.

Donata Passarello (D)

Stanford Synchrotron Radiation Light Source, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States.

Akinola D Oyedele (AD)

Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.

Dante Zakhidov (D)

Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States.
ORCID: 0000-0003-3107-104X

Kai-Wen Chen (KW)

National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan.

Yu-Xun Chen (YX)

National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan.

Shang-Hsien Hsieh (SH)

National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan.

Kazunori Fujisawa (K)

Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.

Raymond R Unocic (RR)

Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.
ORCID: 0000-0002-1777-8228

Kai Xiao (K)

Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.
ORCID: 0000-0002-0402-8276

Alberto Salleo (A)

Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States.

Michael F Toney (MF)

Stanford Synchrotron Radiation Light Source, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States.
ORCID: 0000-0002-7513-1166

Chia-Hao Chen (CH)

National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan.
ORCID: 0000-0003-1311-8342

Efthimios Kaxiras (E)

Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States.

Mauricio Terrones (M)

Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
ORCID: 0000-0003-0010-2851

Boris I Yakobson (BI)

Department of Materials Science and Nano Engineering, Rice University, Houston, Texas 77005, United States.

Avetik R Harutyunyan (AR)

Honda Research Institute USA Inc., San Jose, California 95134, United States.

Classifications MeSH