Novel Self-Powered Photodetector with Binary Photoswitching Based on SnS

SnSx/TiO2 binary photoresponse heterojunctions self-powered photodetector

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
20 May 2020
Historique:
pubmed: 28 4 2020
medline: 28 4 2020
entrez: 28 4 2020
Statut: ppublish

Résumé

Binary photoresponse characteristics can help realize optical signal processing and logic operations. UV photodetectors (PDs) with SnS

Identifiants

DOI: 10.1021/acsami.0c05247 PMID: 32338868
pubmed: 32338868
doi: 10.1021/acsami.0c05247
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

23145-23154

Auteurs

Jing Chen (J)

School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China.

Jianping Xu (J)

School of Science, Tianjin University of Technology, Tianjin 300384, China.
ORCID: 0000-0002-1579-6174

Shaobo Shi (S)

School of Science, Tianjin University of Technology and Education, Tianjin 300222, China.

Rui Cao (R)

School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China.

Ding Liu (D)

School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China.

Yichen Bu (Y)

School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China.

Pengcheng Yang (P)

School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China.

Jianghua Xu (J)

School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China.

Xiaosong Zhang (X)

School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China.

Lan Li (L)

School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China.
ORCID: 0000-0002-0408-8615

Classifications MeSH