Enabling room temperature ferromagnetism in monolayer MoS
Journal
Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555
Informations de publication
Date de publication:
27 Apr 2020
27 Apr 2020
Historique:
received:
01
11
2019
accepted:
24
03
2020
entrez:
29
4
2020
pubmed:
29
4
2020
medline:
29
4
2020
Statut:
epublish
Résumé
Two-dimensional semiconductors, including transition metal dichalcogenides, are of interest in electronics and photonics but remain nonmagnetic in their intrinsic form. Previous efforts to form two-dimensional dilute magnetic semiconductors utilized extrinsic doping techniques or bulk crystal growth, detrimentally affecting uniformity, scalability, or Curie temperature. Here, we demonstrate an in situ substitutional doping of Fe atoms into MoS
Identifiants
pubmed: 32341412
doi: 10.1038/s41467-020-15877-7
pii: 10.1038/s41467-020-15877-7
pmc: PMC7184740
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
2034Subventions
Organisme : U.S. Department of Energy (DOE)
ID : Contract No. DE-SC0012704
Organisme : National Science Foundation (NSF)
ID : NSF-DMR-1420634
Organisme : National Science Foundation (NSF)
ID : NSF-CAREER-DMR-1553788
Organisme : National Science Foundation (NSF)
ID : NSF-ECCS-1608171
Organisme : National Science Foundation (NSF)
ID : NSF-DMR-1809235
Organisme : National Science Foundation (NSF)
ID : NSF-EFRI-1641094
Organisme : National Science Foundation (NSF)
ID : NSF-ECCS-MRI-1531237
Organisme : National Science Foundation (NSF)
ID : NSF-ECCS-MRI-1531237
Organisme : National Science Foundation (NSF)
ID : NSF-ECCS-1104870
Organisme : United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research (AF Office of Scientific Research)
ID : FA9550-19-1-0074
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